Title page for ETD etd-01102009-063443
|Type of Document
||Hoagland, Richard W.
||Time domain device modeling of High Frequency Power MOSFETs
||Master of Science
|Elshabini-Riad, Aicha A.
|Moore, David J.
|Riad, Sedki Mohamed
|Date of Defense
The development of the High Frequency Power MOSFET has brought about a need for
accurate models. Now that the frequency range of these MOSFETs is in domains where
typically scattering parameter measurements are used, a broad band device model can
prove to be extremely useful. This thesis summarizes the research performed towards the
development of a wideband Gate model for the Motorola MRF162 High Frequency Power
Transistor. The device theory for typical MOSFETs will be explained. This theory will
lead into the development of the Power MOSFET and its associated frequency
limitations. The benefits of Time Domain Techniques will be explained and how a
wideband model is achieved from this technique. The result from the analysis of the
measurements and the device theory is a wideband Gate model developed for the
frequency range from 100MHz to 400MHz. Verification is achieved by curve matching
the measured Time Domain Reflected waveforms with the simulated waveforms generated
using a proprietary program Modified Transient Analysis Program (MTCAP) and by
comparison of expected and simulated parasitic values.
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