Title page for ETD etd-02062013-040159
|Type of Document
||Preparation and characterization of Mo/Al layered thin films
||Master of Science
|Houska, Charles R.
|Lytton, Jack L.
|Date of Defense
The fabrication of bilayer and multilayer Mo/Al thin films using a conventional
multi-target rf-diode sputter deposition system was studied. The films were deposited on glass
and Si( 100) substrates. The as-deposited films were charactexized with respect to their structure and composition profiles using X-Ray diifraction, AES, SEM, TEM, and RBS techniques. The as-deposited
bilayer films were of good quality with an interface thickness of about 200 Ä. They were
annealed at different temperatures in the range of 300-600°C for different times. Diffusional intermixing
and phase changes were monitored and diffusivity measurements were made. The growth
characteristics of intermetallic compounds were analysed. Mo/Al multilayer thin films with layer
thicknesses less than 200 Ä were also deposited. An assessment of structural and compositional
modulations in these multilayer films revealed the need for the conversion of the conventional diode
sources to magnetron sources for improvement of film quality. Also presented are a few preliminary
theoretical calculations for high-energy ion·beam mixing of the Mo/Al bilayer thin films.
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