Title page for ETD etd-03122009-040933
|Type of Document
||Kunselman, Gary L.
||Radio frequency power amplifiers for portable communication systems
||Master of Science
|Moore, Daniel J.
|Davis, Willam A.
|Elshabini-Riad, Aicha A.
- Radio frequency
|Date of Defense
Portable communication systems require, in part, high-efficiency radio frequency
power amplifiers (RF PA) if battery lifetime is to be conserved. Conventional amplifier
classifications and definitions are presented in a unified and concise format. The Bipolar
Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET)
are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes
(class CE and class F) meet the system requirements of an 850 MHz operating frequency,
a power output of 3 W, a battery supply voltage of 9 Vdc, and a sinusoidal-type signal to
be amplified. Both classes are evaluated through recent research literature and simulated
using the PSpice® computer simulation program. Class CE and class F are found to
provide efficiencies exceeding 80 percent under the given system constraints.
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