| Type of Document |
Master's Thesis |
| Author |
Chen, Yuhui
|
| Author's Email Address |
chen_y2k@yahoo.com |
| URN |
etd-06272000-14570054 |
| Title |
Resonant Gate Drive Techniques for Power MOSFETs |
| Degree |
Master of Science |
| Department |
Electrical and Computer Engineering |
| Advisory Committee |
| Advisor Name |
Title |
| Lee, Fred C. |
Committee Chair |
| Borojevich, Dushan |
Committee Member |
| van Wyk, Dann |
Committee Member |
|
| Keywords |
- Resonant Power Conversion
- Power MOSFET
- Gate Drive
|
| Date of Defense |
2000-05-12 |
| Availability |
unrestricted |
Abstract
With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers.
|
| Files |
| Filename |
Size |
Approximate Download Time
(Hours:Minutes:Seconds)
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| 28.8 Modem |
56K Modem |
ISDN (64 Kb) |
ISDN (128 Kb) |
Higher-speed Access |
| |
final.pdf |
1.36 Mb |
00:06:19 |
00:03:14 |
00:02:50 |
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