Title page for ETD etd-11152013-040240


Type of Document Master's Thesis
Author Cole, Eric D.
URN etd-11152013-040240
Title On the feasibility and application of optical p to n inversion
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
L. C. Burton Committee Chair
D. D. Chen Committee Member
Richard Zallen Committee Member
Keywords
  • Semiconductors
Date of Defense 1985-06-05
Availability restricted
Abstract
The feasibility of achieving carrier inversion of a properly doped

crystal via optical excitation is studied. This process involves a host

substrate doped with deep donors for n-type light characteristic and

compensated by a shallow acceptor for p-type characteristic in the

dark. This substrate is analyzed using well—known semiconductor equations.

In addition conditions which must exist for carrier inversion are

also specified. The solutions found are applied to a realistic set of

dopants for illustrative purposes as well as indication of feasibility

range. This inversion technique may possibly be used to generate bipolar

junctions and thus devices. Other forms of photo conductivity are also

qualitatively considered to supplement and extend the range of the

inversion techniques applications. The processing of circuits using the

developed concept offers possible interesting and useful advantages over

existing techniques. The motivation for further research thus becomes

obvious and is indeed the purpose of the thesis.

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