Type of Document Master's Thesis Author Ralston, Parrish Elaine Author's Email Address firstname.lastname@example.org URN etd-12152008-172537 Title Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs Degree Master of Science Department Electrical and Computer Engineering Advisory Committee
Advisor Name Title Meehan, Kathleen Committee Chair Agah, Masoud Committee Member Bostian, Charles W. Committee Member Hendrix, Robert Committee Member Lai, Jason Committee Member Raman, Sanjay Committee Member Keywords
- power electronics
- power MOSFET
- silicon carbide
- capacitance voltage measurements
Date of Defense 2008-12-12 Availability unrestricted AbstractThere is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the
measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study
discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0‐40V) and high voltage (40‐5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.
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