| Type of Document |
Master's Thesis |
| Author |
Ralston, Parrish Elaine
|
| Author's Email Address |
pralston@vt.edu |
| URN |
etd-12152008-172537 |
| Title |
Design and Verification of a High Voltage, Capacitance Voltage Measurement
System for Power MOSFETs |
| Degree |
Master of Science |
| Department |
Electrical and Computer Engineering |
| Advisory Committee |
| Advisor Name |
Title |
| Meehan, Kathleen |
Committee Chair |
| Agah, Masoud |
Committee Member |
| Bostian, Charles W. |
Committee Member |
| Hendrix, Robert |
Committee Member |
| Lai, Jason |
Committee Member |
| Raman, Sanjay |
Committee Member |
|
| Keywords |
- power electronics
- power MOSFET
- capacitance
- silicon carbide
- capacitance voltage measurements
|
| Date of Defense |
2008-12-12 |
| Availability |
unrestricted |
Abstract
There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the
measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study
discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0‐40V) and high voltage (40‐5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.
|
| Files |
| Filename |
Size |
Approximate Download Time
(Hours:Minutes:Seconds)
|
| 28.8 Modem |
56K Modem |
ISDN (64 Kb) |
ISDN (128 Kb) |
Higher-speed Access |
| |
ParrishRalston_MastersThesis.pdf |
5.44 Mb |
00:25:10 |
00:12:57 |
00:11:19 |
00:05:39 |
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